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| TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G1dB VDS= 9V 6.5 Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 dBm dB A % dBc A C f =10.7-11.7GHz add IM3 -42 VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS=1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -30A Channel to Case MIN. TYP. MAX. UNIT 600 mS -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V C/W The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. TOSHIBA CORPORATION Apr. 2000 TIM1011-2L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg RATING 15 -5 2.6 15 175 -65 +175 UNIT V V A W C C PACKAGE OUTLINE (2-9D1B) 2.0MIN. 4-R2.4 Unit : mm 2.50.3 9.70.3 Gate Source Drain 0.50.15 13.00.3 17.0 MAX. 8.5 MAX. +0.1 0.1 -0.05 2.0MIN 0.2MAX 2 1.20.3 1.80.3 3.2MAX HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds 260 at 260C. TIM1011-2L Output Power vs. Frequency 37 36 Po (dBm) 35 34 33 32 31 9.7 10.2 10.7 11.2 11.7 Frequency (GHz) 12.2 12.7 VDS = 9 V IDS 0.85A Pin = 26 dBm Output Power vs. Input Power 36 35 34 33 Po (dBm) 32 31 30 29 28 27 20 22 24 26 Pin (dBm) 28 30 f = 11.7 GHz VDS = 9V IDS 0.85 A 90 80 70 60 50 40 30 20 10 0 add (%) 3 TIM1011-2L P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E 25 20 15 P T (W) 10 5 0 0 40 80 T c ( ) 120 160 200 CHARACTERISTIC IM3 OUTPUT POWER CHARACTERISTICS IM3 vs.vs. OUTPUT POWER CHARACTERISTICS -10 f = 11.7 GHz VDS = 9 V IDS 1.0 A f= 5MHz -20 IM3 (dBc) -30 -40 -50 -60 17 19 21 23 25 Po (dBm), Single Carrie Po(dBm), Single Carrier 4 27 29 TIM1011-2L TIM11011-2L S-PARAMETERS (MAGN. and ANGLES) VDS=9V, IDS=1.0A f=10.4 - 13.2GHz FREQUENCY (GHz) MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 10.4 10.8 11.2 11.6 12.0 12.4 12.8 13.2 0.76 0.54 0.25 0.16 0.26 0.30 0.34 0.49 148 110 50 -63 -123 -164 142 58 2.49 2.98 3.12 2.84 2.55 2.37 2.30 2.05 -85 -131 180 132 89 46 -1 -61 0.066 0.110 0.145 0.153 0.155 0.158 0.164 0.154 -139 176 129 84 43 3 -42 -100 0.55 0.46 0.38 0.36 0.37 0.34 0.22 0.18 121 62 -9 -67 -103 -130 -146 -48 5 |
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